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| MITSUBISHI Nch POWER MOSFET FS10VS-6 HIGH-SPEED SWITCHING USE FS10VS-6 OUTLINE DRAWING r 1.5MAX. Dimensions in mm 4.5 1.3 10.5MAX. 1.5MAX. 8.6 0.3 9.8 0.5 3.0 +0.3 -0.5 0 +0.3 -0 1 5 0.8 0.5 qwe wr 2.6 0.4 q VDSS ................................................................................ 300V rDS (ON) (MAX) .............................................................. 0.68 ID .......................................................................................... 10A q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 300 30 10 30 90 -55 ~ +150 -55 ~ +150 1.2 4.5 Unit V V A A W C C g Feb.1999 Typical value (1.5) MITSUBISHI Nch POWER MOSFET FS10VS-6 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 300V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 300 30 -- -- 2 -- -- 4.0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.52 2.6 6.0 570 110 20 17 25 60 30 1.5 -- Max. -- -- 10 1 4 0.68 3.4 -- -- -- -- -- -- -- -- 2.0 1.39 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 MAXIMUM SAFE OPERATING AREA 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10ms TC = 25C Single Pulse DC POWER DISSIPATION PD (W) 80 DRAIN CURRENT ID (A) tw=10s 100s 1ms 60 40 20 0 0 50 100 150 200 10-1 7 5 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD = 90W 6V CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD= TC = 25C 90W Pulse Test 20 10 DRAIN CURRENT ID (A) 16 7V 12 6V 8 DRAIN CURRENT ID (A) 8 6 5.5V 4 5V 2 TC = 25C Pulse Test 4 5V 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10VS-6 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0 TC = 25C Pulse Test 0.8 VGS = 10V 20V TC = 25C Pulse Test 32 24 ID = 20A 16 15A 8 10A 5A 0 4 8 12 16 20 0.6 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25C VDS = 50V Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) 32 24 3 2 100 7 5 3 2 10-1 0 10 23 TC = 25C 75C 16 125C 8 0 VDS = 10V Pulse Test 5 7 101 23 5 7 102 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 103 7 5 3 2 102 7 5 Coss Ciss 103 7 5 SWITCHING TIME (ns) SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25C VDD = 150V VGS = 10V RGEN = RGS = 50 CAPACITANCE Ciss, Coss, Crss (pF) 3 2 102 7 5 3 2 101 100 23 td(off) tf td(on) tr 5 7 101 23 5 7 102 3 Tch = 25C 2 f = 1MHz Crss VGS = 0V 101 7 5 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS10VS-6 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 40 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 16 SOURCE CURRENT IS (A) Tch = 25C ID = 10A VDS = 50V 100V 200V 8 32 TC = 125C 24 25C 75C 8 12 16 4 0 0 8 16 24 32 40 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 5.0 VGS = 10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 3.0 2.0 1.0 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D=1 100 7 5 3 2 10-1 7 5 3 2 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 1.0 0.8 PDM tw T D= tw T 0.6 0.4 -50 0 50 100 150 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (C) |
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